sfh 4730, sfh 4740 osram ostar obse rvation (850nm) lead (pb) free produc t - rohs compliant sfh 4730 sfh 4740 2010-12-15 1 sfh 4740 sfh 4730 ? schwarzer rahmen zur streulichtminimierung ?3.6 w optische leistung bei if=1a sfh 4740 ? wei?er rahmen fr hohe lichtleistung ?4.3 w optische leistung bei if=1a wesentliche merkmale ? aktive chipfl?che 2.1 x 5.4 mm 2 ? max. gleichstrom 1 a ? niedriger w?rmewiderstand (2.8 k/w) ? emissionswellenl?nge 850 nm ? esd-sicher bis 2 kv nach jesd22-a114-e ? augensicherheitsrichtlinien der iec-normen 60825-1 und 62471 mssen beachtet werden. anwendungen ? infrarotbeleuchtung fr kameras ? berwachungssysteme ? ir-datenbertragung ? fahrer-assistenz systeme typ type bestellnummer ordering code strahlst?rke 1) ( i f = 1a, t p = 20 ms) radiant intensity 1) e (mw/sr) 1) gemessen bei einem raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr. sfh 4730 q65110a5452 800 (typ.1200) sfh 4740 Q65110A6190 1000 (typ.1400) sfh 4730 ? black frame to minimize scattered light ?3.6 w optical power at if=1a sfh 4740 ? white frame to achieve high optical power ?4.3 w optical power at if=1a features ? active chip area 2.1 x 5.4 mm 2 ? max. dc-current 1 a ? low thermal resistance (2.8 k/w) ? spectral emission at 850 nm ? esd safe up to 2 kv acc. to jesd22-a114-e ? eye safety precautions given in iec 60825-1 and iec 62471 have to be followed. applications ? infrared illumination for cameras ? surveillance systems ? ir data transmission ? driver assistance systems
2010-12-15 2 sfh 4730, sfh 4740 grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t b, op , t b, stg ? 40 + 125 c sperrschichttemperatur junction temperature t j + 145 c sperrspannung reverse voltage v r 0.5 v vorw?rtsgleichstrom , t b 1) 90 c forward current i f 1 a sto?strom, t p < 3 ms, d = 0 surge current i fsm 5 a leistungsaufnahme, t b 90 c power consumption p tot 19 w thermische verlustleistung, t b 90 c thermal power-dissipation p th 15.4 w w?rmewiderstand sperrschicht / bodenplatte thermal resistance junction / base plate r thjb 2.8 k/w 1) t b = temperatur auf der rckseite der metallkernplati ne / temperature at the backside of the base plate.
sfh 4730, sfh 4740 2010-12-15 3 kennwerte ( t b = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der strahlung wavelength at peak emission i f = 1 a, t p = 10 ms peak 860 nm schwerpunkts-wellenl ?nge der strahlung centroid wavelength i f = 1 a, t p = 10 ms centroid 850 nm spektrale bandbreite bei 50% von i max spectral bandwidth at 50% of i max i f = 1 a, t p = 10 ms ? 30 nm abstrahlwinkel half angle ? 60 grad deg. abmessungen der aktiven chipfl?che 1) dimension of the active chip area l b l w 2.1 5.4 mm2 schaltzeiten, i e von 10% auf 90% und von 90% auf 10%, i f = 5 a, r l = 50 switching times, e from 10% to 90% and from 90% to 10%, i f = 5 a, r l = 50 t r , t f 10, 10 ns durchlassspannung forward voltage i f = 1 a, t p = 100 s v f 15.5 ( 19) v gesamtstrahlungsfluss total radiant flux i f = 1 a, t p = 100 s sfh 4730 sfh 4740 e e 3.6 4.3 w w temperaturkoeffizient von i e bzw. e temperature coefficient of i e or e i f = 1 a, t p = 10 ms tc i ? 0.3 %/k temperaturkoeffizient von v f temperature coefficient of v f i f = 1 a, t p = 10 ms tc v ? 10 mv/k temperaturkoeffizient von temperature coefficient of i f = 1 a, t p = 10 ms tc , centroid + 0.3 nm/k 1) die aktive chipfl?che besteht aus 10 einzelnen chips mit je 1 x 1 mm2. the active chip area consists of 10 single chips with 1 x 1 mm2 each.
2010-12-15 4 sfh 4730, sfh 4740 strahlst?rke 1) e radiant intensity 1) e 1) nur eine gruppe in einer verpackung seinheit (streuung kleiner 1.6:1) only one group in one packing unit (variation lower 1.6:1) bezeichnung parameter symbol werte values einheit unit sfh 4730 -eb sfh 4730 -fa sfh 4740 -fa sfh 4740 -fb strahlst?rke radiant intensity i f = 1 a, t p = 20 ms e min e max 800 1250 1000 1600 1000 1600 1250 2000 mw/sr mw/sr abstrahlcharakteristik radiation characteristics i rel = f ( ? ) 0 0.2 0.4 1.0 0.8 0.6 ? 1.0 0.8 0.6 0.4 0? 10? 20? 40? 30? ohl01660 50? 60? 70? 80? 90? 100? 0? 20? 40? 60? 80? 100? 120?
sfh 4730, sfh 4740 2010-12-15 5 relative spektrale emission relative spectral emission i rel = f ( ), t b = 25 c max. zul?ssiger durchlassstrom max. permissible forward current i f = f ( t b ), r thjb = 2.8 k/w 700 0 nm % ohf04132 20 40 60 80 100 950 750 800 850 i rel t b 100 0 200 400 300 500 700 600 800 f i 900 ma 1100 ohf04318 durchlassstrom forward current i f = f ( v f ), t b = 25 c, single pulse, t p = 100 s zul?ssige impulsbelastbarkeit permissible pulse handling capability i f = f ( t p ), t b = 85 c, duty cycle d = parameter ohf04319 f i v a 10 f v 10 -1 5 10 0 5 10 1 10 -2 15 20 25 10 10 0 -2 -3 -4 -5 10 10 10 f i a p t = d t 2 1 0 -1 10 t p 10 s 10 ohf04317 t t p i f 0.5 0.33 0.1 0.2 0.05 0.005 0.01 0.02 d = 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.5 1 relativer gesamtstrahlungsfluss relative total radiant flux e / e (1a) = f ( i f ), t b = 25 c, single pulse, t p = 100 s ohf03848 10 -3 a 10 1 0 10 5 5 10 -1 -2 5 10 i f 10 10 0 10 1 10 55 -2 -1 (1 a) e e
2010-12-15 6 sfh 4730, sfh 4740 smd ntc thermistor mit nickel barrier termination, typ 0603 smd ntc thermistor with nickel barrier termination, type 0603 no. of r/t characteristics r 25 [ ] b 25/50 [k] b 25/85 [k] b 25/100 [k] epcos 8502 / a01 10k 5% 3940 3980 4000 -60 ?c t r ohl02893 ntc -20 20 60 100 160 2 10 10 3 5 5 4 10 10 5 5 6 10 typische thermistor kennlinie typical thermistor graph (www.epcos.com)
sfh 4730, sfh 4740 2010-12-15 7 ma?zeichnung und ersatzschaltbild package outlines and equivalent circuit diagram ma?e in mm (inch) / di mensions in mm (inch). verwendeter stecker / used male connector on board: erni male connector smd 214 012, 4-pins (www.erni.com) empfohlene gegenstecker / recommended female connector for power supply: erni female connector smd 214025, 4-pins (www.erni.com) published by osram opto semiconductors gmbh leibnizstra?e 4, d-93055 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered.
mouser electronics related product links 720-sfh4730 - osram opto semiconductor sfh 4730 720-sfh4740 - osram opto semiconductor sfh 4740
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